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An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
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IBM 回应 AI 冲击:现代化远不止改代码
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В Финляндии предупредили об опасном шаге ЕС против России09:28